Pastāsti draugiem par šo preci:
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond - Springer Theses Guilei Wang 2019 edition
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond - Springer Theses
Guilei Wang
115 pages, 40 Tables, color; XVI, 115 p.
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2020. gada 2. oktobris |
| ISBN13 | 9789811500480 |
| Izdevēji | Springer Verlag, Singapore |
| Lapas | 115 |
| Izmēri | 150 × 220 × 10 mm · 215 g |