Pastāsti draugiem par šo preci:
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond - Springer Theses Guilei Wang 2019 edition
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond - Springer Theses
Guilei Wang
115 pages, 40 Tables, color; XVI, 115 p.
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2019. gada 2. oktobris |
| ISBN13 | 9789811500459 |
| Izdevēji | Springer Verlag, Singapore |
| Lapas | 115 |
| Izmēri | 150 × 220 × 20 mm · 454 g |