Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics Softcover reprint of the original 1st ed. 2016 edition

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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics

347 pages, 159 Tables, color; 150 Illustrations, color; 104 Illustrations, black and white; XVIII, 3

Mediji	Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru)
Izlaists	2018. gada 15. jūnijs
ISBN13	9789402414165
Izdevēji	Springer
Lapas	347
Izmēri	150 × 220 × 10 mm · 522 g (Svars (aptuveni))
Redaktors	Ishiwara, Hiroshi
Redaktors	Okuyama, Masanori
Redaktors	Park, Byung-Eun
Redaktors	Sakai, Shigeki
Redaktors	Yoon, Sung-Min