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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics Second Edition 2020 edition
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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics
425 pages, 183 Illustrations, color; 130 Illustrations, black and white; XIV, 425 p. 313 illus., 183
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2021. gada 24. marts |
| ISBN13 | 9789811512148 |
| Izdevēji | Springer Verlag, Singapore |
| Lapas | 425 |
| Izmēri | 150 × 220 × 10 mm · 612 g |
| Redaktors | Ishiwara, Hiroshi |
| Redaktors | Okuyama, Masanori |
| Redaktors | Park, Byung-Eun |
| Redaktors | Sakai, Shigeki |
| Redaktors | Yoon, Sung-Min |
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