Pastāsti draugiem par šo preci:
The Source / Drain Engineering of Nanoscale Germanium-based MOS Devices - Springer Theses Zhiqiang Li Softcover reprint of the original 1st ed. 2016 edition
The Source / Drain Engineering of Nanoscale Germanium-based MOS Devices - Springer Theses
Zhiqiang Li
59 pages, 49 Illustrations, color; 3 Illustrations, black and white; XIV, 59 p. 52 illus., 49 illus.
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2018. gada 7. jūnijs |
| ISBN13 | 9783662570265 |
| Izdevēji | Springer-Verlag Berlin and Heidelberg Gm |
| Lapas | 59 |
| Izmēri | 150 × 220 × 10 mm · 151 g |
| Valoda | Vācu |