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Design and Simulation of Trench Gate Power Mosfet: for Rf and Switching Applications Raghvendra Sahai Saxena
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Design and Simulation of Trench Gate Power Mosfet: for Rf and Switching Applications
Raghvendra Sahai Saxena
Trench gate power MOSFETs are the best suited devices for low to medium voltage power applications, like microprocessor power supplies, LED display drivers and automobiles etc. The main figures of merit of a power device are its ON-state resistance, breakdown voltage, switching delays and the power consumed during its operation. All these parameters are interlinked by the technology and the physics behind its operation. In this work such problems have been studied systematically and several methods have been proposed to overcome these limitations in a trench gate power MOSFET by improving its basic structure and are verified by the 2D numerical simulations using industry standard TCAD tools.
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2012. gada 20. decembris |
| ISBN13 | 9783659308598 |
| Izdevēji | LAP LAMBERT Academic Publishing |
| Lapas | 156 |
| Izmēri | 150 × 9 × 226 mm · 235 g |
| Valoda | Angļu |