Pastāsti draugiem par šo preci:
GaP Heteroepitaxy on Si (100): Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients - Springer Theses Henning Doescher 2013 edition
GaP Heteroepitaxy on Si (100): Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients - Springer Theses
Henning Doescher
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
157 pages, 47 black & white illustrations, 33 colour illustrations, biography
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2013. gada 11. decembris |
| ISBN13 | 9783319028798 |
| Izdevēji | Springer International Publishing AG |
| Lapas | 143 |
| Izmēri | 155 × 235 × 13 mm · 362 g |
| Valoda | Angļu |
Ziemassvētku dāvanas var atgriezt līdz 31. janvārim