Pastāsti draugiem par šo preci:
Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion - Engineering Materials and Processes Edmund G. Seebauer 2009 edition
Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion - Engineering Materials and Processes
Edmund G. Seebauer
"Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
298 pages, 30 black & white tables, biography
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2008. gada 1. decembris |
| ISBN13 | 9781848820586 |
| Izdevēji | Springer London Ltd |
| Lapas | 298 |
| Izmēri | 155 × 235 × 25 mm · 635 g |
| Valoda | Angļu |