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High-k Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) 1. izdevums
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High-k Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS).
246 pages, 18 Tables, black and white; 24 Illustrations, color; 79 Illustrations, black and white
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2020. gada 18. decembris |
| ISBN13 | 9781771888431 |
| Izdevēji | Apple Academic Press Inc. |
| Lapas | 264 |
| Izmēri | 150 × 220 × 20 mm · 650 g |
| Valoda | Angļu |
| Redaktors | Baishya, Srimanta (National Institute of Technology, India) |
| Redaktors | Maity, Reshmi (Mizoram University, India) |
| Redaktors | Pratap Maity, Niladri (Mizoram University, India) |
