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Doping Engineering for Front-End Processing: Volume 1070 - MRS Proceedings B J Pawlak
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Doping Engineering for Front-End Processing: Volume 1070 - MRS Proceedings
B J Pawlak
The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
319 pages, illustrations
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2008. gada 17. oktobris |
| ISBN13 | 9781605110400 |
| Izdevēji | Materials Research Society |
| Lapas | 319 |
| Izmēri | 152 × 228 × 23 mm · 566 g |
| Valoda | Angļu |
| Redaktors | Law, M. (University of Florida) |
| Redaktors | Pawlak, B. J. |
| Redaktors | Pelaz, M. L. (Universidad de Valladolid, Spain) |
| Redaktors | Surugo, K. |
