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Nitride Wide Bandgap Semiconductor Material and Electronic Devices Yue Hao 1. izdevums
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Yue Hao
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
388 pages, 469 black & white illustrations, 30 black & white tables
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2016. gada 3. oktobris |
| ISBN13 | 9781498745123 |
| Izdevēji | Taylor & Francis Inc |
| Lapas | 392 |
| Izmēri | 262 × 184 × 22 mm · 894 g |
| Valoda | Angļu |