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Nitride Wide Bandgap Semiconductor Material and Electronic Devices Yue Hao 1. izdevums
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Yue Hao
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
392 pages
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2020. gada 30. jūnijs |
| ISBN13 | 9780367574369 |
| Izdevēji | Taylor & Francis Ltd |
| Lapas | 392 |
| Izmēri | 150 × 220 × 10 mm · 771 g |
| Valoda | Angļu |