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Photo-induced Defects in Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering Redfield, David (Stanford University, California)
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Photo-induced Defects in Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering
Redfield, David (Stanford University, California)
This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices.
240 pages, 106 b/w illus.
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 1996. gada 26. janvāris |
| ISBN13 | 9780521461962 |
| Izdevēji | Cambridge University Press |
| Lapas | 230 |
| Izmēri | 159 × 237 × 22 mm · 494 g |
| Valoda | Angļu |
