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Photo-induced Defects in Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering Redfield, David (Stanford University, California)
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Paredzamā piegāde . gada 1. - 9. okt.
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Photo-induced Defects in Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering
Redfield, David (Stanford University, California)
This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices.
232 pages, 106 b/w illus.
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2006. gada 9. marts |
| ISBN13 | 9780521024457 |
| Izdevēji | Cambridge University Press |
| Lapas | 232 |
| Izmēri | 152 × 229 × 14 mm · 350 g |
| Valoda | Angļu |
| Sērijas redaktors | Ahmad, Haroon |
| Sērijas redaktors | Broers, Alec |
| Sērijas redaktors | Pepper, Michael |
