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Materials for High-Temperature Semiconductor Devices National Research Council
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Materials for High-Temperature Semiconductor Devices
National Research Council
Surveys three wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to development and manufacture, determines the criteria for packaging and integrating these devices into existing systems, and recommends research priorities.
136 pages
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 1995. gada 14. septembris |
| ISBN13 | 9780309053358 |
| Izdevēji | National Academies Press |
| Lapas | 136 |
| Izmēri | 216 × 279 × 25 mm · 408 g |
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