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High Speed Heterostructure Devices - Semiconductors and Semimetals Kiehl
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High Speed Heterostructure Devices - Semiconductors and Semimetals
Kiehl
Aimed at the graduate student or working researcher, this work includes a review of InP-based HFETs and complementary HFETs. It offers a three-chapter review of resonant tunneling; and provides an emphasis on circuits as well as devices.
Marc Notes: Includes bibliographical references and index. Table of Contents: "F. Capasso, F. Beltram, S. Sen, A. Palevski, and Y. A. Cho, " Quantum Electron Devices: Physics and Applications. "P. Solomon, D. J. Frank, S. L. Wright, and F. Canora, " GaAs-Gate Semiconductor-Insulator-Semiconductor FET."M. M. Hashemi and U. K. Mishra, " Unipolar InP-Based Transistors. "R. A. Kiehl, " Complementary Heterostructure FET Integrated Circuits. "T. Ishibashi, " GaAs-Based and InP-Based Heterostructure Bipolar Transistors. "H. C. Liu and T. C. L. G. Sollner, " High Frequency Resonant-Tunneling Devices. "H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, " Resonant-Tunneling Hot-Electron Transistors and Circuits. References. Index.
Contributor Bio: Weber, Eicke R fm.author_biographical_note3
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 1994. gada 2. jūnijs |
| ISBN13 | 9780127521411 |
| Izdevēji | Elsevier Science Publishing Co Inc |
| Lapas | 454 |
| Izmēri | 152 × 229 × 27 mm · 811 g |
| Valoda | Angļu |
| Sērijas redaktors | Beer, Albert C. (CONSULTING PHYSICIST<br>COLUMBUS, OHIO) |
| Sērijas redaktors | Weber, Eicke R. (Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany) |
