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Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling - Springer Series in Advanced Microelectronics Softcover reprint of the original 1st ed. 2016 edition

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Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling - Springer Series in Advanced Microelectronics

269 pages, 17 Tables, black and white; 67 Illustrations, color; 134 Illustrations, black and white;

Mediji	Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru)
Izlaists	2016. gada 23. oktobris
ISBN13	9788132234241
Izdevēji	Springer, India, Private Ltd
Lapas	269
Izmēri	150 × 220 × 10 mm · 493 g
Redaktors	Mahapatra, Souvik