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Novel Three-state Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications Supriya Karmakar 2014 edition
Novel Three-state Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications
Supriya Karmakar
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM).
148 pages, 72 black & white illustrations, 49 colour illustrations, 24 black & white tables, biograp
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2013. gada 10. decembris |
| ISBN13 | 9788132216346 |
| Izdevēji | Springer, India, Private Ltd |
| Lapas | 134 |
| Izmēri | 155 × 235 × 9 mm · 390 g |
| Valoda | Angļu |
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