N-gaas - P-(gaas)1-x-u (Ge2)x (Znse)y Heterostructures - Sirojiddin Zainabidinov - Grāmatas - KS Omniscriptum Publishing - 9786200630001 - 2021. gada 14. decembris
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N-gaas - P-(gaas)1-x-u (Ge2)x (Znse)y Heterostructures

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The monograph outlines the basic principles of the technology for producing thin semiconductor compounds A2B6 and S24 on A3B5 by liquid phase epitaxy, based on results of structural studies, the mechanisms of formation of nanocrystals of impurity atoms at the interface of layers and the peculiarities of current flow in these structures. The technology of manufacturing multilayer structures provide opportunities to create multifunctional electronic products based on heterostructures with predefined areas of the light absorption spectrum, gas, thermal sensitive sensors and sensors, and receivers. The monograph is intended for specialists in electronic technology, as well as for students, masters and researchers of the relevant specialties of universities.

Mediji Grāmatas     Paperback Book   (Grāmata ar mīksto vāku un līmēto muguru)
Izlaists 2021. gada 14. decembris
ISBN13 9786200630001
Izdevēji KS Omniscriptum Publishing
Lapas 72
Izmēri 152 × 229 × 4 mm   ·   125 g
Valoda Angļu  

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