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High Performance Gan Light-emitting Diode: a Reliability Study Zonglin Li
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High Performance Gan Light-emitting Diode: a Reliability Study
Zonglin Li
The reliability of InGaN/GaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device performances, like current-voltage characteristics, 1/f noise spectrum, leakage, static resistance, were measured. The devices underwent a 1000-hr constant-current stress test and their optical output degradation rate was examined. The results were explained by cross-related data.
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2011. gada 17. maijs |
| ISBN13 | 9783844395297 |
| Izdevēji | LAP LAMBERT Academic Publishing |
| Lapas | 80 |
| Izmēri | 150 × 5 × 226 mm · 137 g |
| Valoda | Vācu |
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