Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics - Viktor Sverdlov - Grāmatas - Springer Verlag GmbH - 9783709119334 - 2016. gada 23. augusts
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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics Softcover reprint of the original 1st ed. 2011 edition

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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.


252 pages, 50 Tables, black and white; XIV, 252 p.

Mediji Grāmatas     Paperback Book   (Grāmata ar mīksto vāku un līmēto muguru)
Izlaists 2016. gada 23. augusts
ISBN13 9783709119334
Izdevēji Springer Verlag GmbH
Lapas 252
Izmēri 150 × 220 × 10 mm   ·   455 g
Valoda Vācu  

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