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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics Viktor Sverdlov Softcover reprint of the original 1st ed. 2011 edition
Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics
Viktor Sverdlov
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
252 pages, 50 Tables, black and white; XIV, 252 p.
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2016. gada 23. augusts |
| ISBN13 | 9783709119334 |
| Izdevēji | Springer Verlag GmbH |
| Lapas | 252 |
| Izmēri | 150 × 220 × 10 mm · 455 g |
| Valoda | Vācu |