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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics Viktor Sverdlov 2011 edition
Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics
Viktor Sverdlov
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
268 pages, 101 black & white illustrations, 50 black & white tables, biography
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2010. gada 24. novembris |
| ISBN13 | 9783709103814 |
| Izdevēji | Springer Verlag GmbH |
| Lapas | 252 |
| Izmēri | 170 × 244 × 15 mm · 635 g |
| Valoda | Franču |
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