Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics - Viktor Sverdlov - Grāmatas - Springer Verlag GmbH - 9783709103814 - 2010. gada 24. novembris
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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics 2011 edition

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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.


268 pages, 101 black & white illustrations, 50 black & white tables, biography

Mediji Grāmatas     Hardcover Book   (Grāmata ar cieto muguriņu un vāku)
Izlaists 2010. gada 24. novembris
ISBN13 9783709103814
Izdevēji Springer Verlag GmbH
Lapas 252
Izmēri 170 × 244 × 15 mm   ·   635 g
Valoda Franču  

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