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An Soi Ldmos for Better Switch Application: Electron Devices Anup Kumar Bhattacharjee
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An Soi Ldmos for Better Switch Application: Electron Devices
Anup Kumar Bhattacharjee
This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-?m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-?m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2013. gada 1. jūnijs |
| ISBN13 | 9783659406751 |
| Izdevēji | LAP LAMBERT Academic Publishing |
| Lapas | 84 |
| Izmēri | 150 × 5 × 225 mm · 143 g |
| Valoda | Vācu |
Skatīt visus Anup Kumar Bhattacharjee ( piem., Paperback Book )