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Simulation of Nano Mos Transistor: Simulation of 22nm Nmos Transistor Madhuri Borkar
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Simulation of Nano Mos Transistor: Simulation of 22nm Nmos Transistor
Madhuri Borkar
This book gives an idea of modifications in fabrication steps of 22nm MOS transistor. A 22nm MOS transistor results are compared with a new modification process of stress. Their are two types of stress uniaxial and biaxial stress. Key Features: 1. Concept of Scaling. 2. Basic concept of MOS transistor. 3. Fabication process of 180nm MOS transistor. 4. Modified processes used in fabrication of 22nm MOS transistor.
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2012. gada 6. novembris |
| ISBN13 | 9783659256202 |
| Izdevēji | LAP LAMBERT Academic Publishing |
| Lapas | 68 |
| Izmēri | 150 × 4 × 225 mm · 119 g |
| Valoda | Vācu |
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