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Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties - Engineering Materials Hamid Bentarzi 2011 edition
Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties - Engineering Materials
Hamid Bentarzi
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure.
120 pages, 10 black & white tables, biography
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2013. gada 25. februāris |
| ISBN13 | 9783642266881 |
| Izdevēji | Springer-Verlag Berlin and Heidelberg Gm |
| Lapas | 106 |
| Izmēri | 155 × 235 × 6 mm · 176 g |
| Valoda | Angļu |