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GaP Heteroepitaxy on Si (100): Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients - Springer Theses Henning Doescher Softcover reprint of the original 1st ed. 2013 edition
GaP Heteroepitaxy on Si (100): Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients - Springer Theses
Henning Doescher
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
157 pages, 47 black & white illustrations, 33 colour illustrations, biography
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2016. gada 3. septembris |
| ISBN13 | 9783319379555 |
| Izdevēji | Springer International Publishing AG |
| Lapas | 143 |
| Izmēri | 155 × 235 × 9 mm · 231 g |
| Valoda | Vācu |