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Emerging Resistive Switching Memories - SpringerBriefs in Materials Jianyong Ouyang 1st ed. 2016 edition
Emerging Resistive Switching Memories - SpringerBriefs in Materials
Jianyong Ouyang
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
101 pages, 31 black & white illustrations, 41 colour illustrations, 10 colour tables, biography
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2016. gada 11. jūlijs |
| ISBN13 | 9783319315706 |
| Izdevēji | Springer International Publishing AG |
| Lapas | 93 |
| Izmēri | 155 × 235 × 6 mm · 158 g |
| Valoda | Vācu |