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Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes - Synthesis Lectures on Emerging Engineering Technologies Nabil Shovon Ashraf
Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes - Synthesis Lectures on Emerging Engineering Technologies
Nabil Shovon Ashraf
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2025. gada 27. marts |
| ISBN13 | 9783031842856 |
| Izdevēji | Springer International Publishing AG |
| Lapas | 129 |
| Izmēri | 174 × 249 × 14 mm · 424 g |
| Valoda | Vācu |
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