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Transient Electro-Thermal Modeling on Power Semiconductor Devices - Synthesis Lectures on Power Electronics Tanya Kirilova Gachovska
Transient Electro-Thermal Modeling on Power Semiconductor Devices - Synthesis Lectures on Power Electronics
Tanya Kirilova Gachovska
The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device.
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2013. gada 26. novembris |
| ISBN13 | 9783031013782 |
| Izdevēji | Springer International Publishing AG |
| Lapas | 68 |
| Izmēri | 235 × 191 × 11 mm · 196 g |
| Valoda | Angļu |