Nano-CMOS and Post-CMOS Electronics: Volume 1 - Saraju P. Mohanty - Grāmatas - Institution of Engineering and Technolog - 9781849199988 - 2016. gada 4. maijs
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Nano-CMOS and Post-CMOS Electronics: Volume 1


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The demand for ever smaller and portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes. This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, and is a limit on further miniaturization. To enable even smaller electronics, various nanodevices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor. This book explores these nanoelectronics at the device level including modelling and design.


Topics covered include high-k dielectrics; high mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arrays; anodic metal-insulator-metal (MIM) capacitors; graphene transistors; junction and doping free transistors; nanoscale gigh-k/metal-gate CMOS and FinFET based logic libraries; multiple-independent-gate nanowire transistors; carbon nanotubes for efficient power delivery; timing driven buffer insertion for carbon nanotube interconnects; memristor modeling; and neuromorphic devices and circuits.


This book is essential reading for researchers, research-focused industry designers/developers, and advanced students working on next-generation electronic devices and circuits.

Mediji Grāmatas     Hardcover Book   (Grāmata ar cieto muguriņu un vāku)
Izlaists 2016. gada 4. maijs
ISBN13 9781849199988
Izdevēji Institution of Engineering and Technolog
Lapas 384
Izmēri 150 × 220 × 20 mm   ·   670 g   (Svars (aptuveni))
Valoda Angļu  

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