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Simulation of Transport in Nanodevices F Dollfus
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Simulation of Transport in Nanodevices
F Dollfus
Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down.
380 pages
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2016. gada 13. decembris |
| ISBN13 | 9781848215665 |
| Izdevēji | ISTE Ltd and John Wiley & Sons Inc |
| Lapas | 228 |
| Izmēri | 165 × 241 × 28 mm · 717 g |
| Redaktors | Dollfus, Philippe (Center for Nanoscience and Nanotechnology, Orsay, France) |
| Redaktors | Triozon, Francois (CEA-LETI, Grenoble, France) |
