Design, Simulation and Construction of Field Effect Transistors - Dhanasekaran Vikraman - Grāmatas - IntechOpen - 9781789234169 - 2018. gada 18. jūlijs
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Design, Simulation and Construction of Field Effect Transistors

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Paredzamā piegāde . gada 17. - 31. aug.
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In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.


166 pages

Mediji Grāmatas     Hardcover Book   (Grāmata ar cieto muguriņu un vāku)
Izlaists 2018. gada 18. jūlijs
ISBN13 9781789234169
Izdevēji IntechOpen
Lapas 166
Izmēri 180 × 260 × 11 mm   ·   467 g
Valoda Angļu  
Redaktors Kim, Hyun-Seok
Redaktors Vikraman, Dhanasekaran

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