Pastāsti draugiem par šo preci:
SiC Power Module Design: Performance, robustness and reliability - Energy Engineering Alberto Castellazzi
Cena
€ 133,49
Pasūtīts no attālās noliktavas
Paredzamā piegāde . gada 14. - 28. aug.
Saņemiet paziņojumus par jauniem Alberto Castellazzi izdevumiem
Mūsu klienti saka:
Pievienot savam iMusic vēlmju sarakstam
SiC Power Module Design: Performance, robustness and reliability - Energy Engineering
Alberto Castellazzi
Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes.
360 pages
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2022. gada 3. februāris |
| ISBN13 | 9781785619076 |
| Izdevēji | Institution of Engineering and Technolog |
| Lapas | 360 |
| Izmēri | 241 × 163 × 28 mm · 725 g |
| Valoda | Angļu |
| Redaktors | Castellazzi, Alberto (Professor, Kyoto University of Advanced Science, Japan) |
| Redaktors | Irace, Andrea (Professor of Electronics, University of Naples Federico II, Italy) |
