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Silicon Carbide 2008 — Materials, Processing and Devices: Volume 1069 - MRS Proceedings M Law
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Silicon Carbide 2008 — Materials, Processing and Devices: Volume 1069 - MRS Proceedings
M Law
Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices.
283 pages, illustrations
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2008. gada 31. jūlijs |
| ISBN13 | 9781605110394 |
| Izdevēji | Materials Research Society |
| Lapas | 298 |
| Izmēri | 157 × 234 × 20 mm · 518 g |
| Valoda | Angļu |
| Redaktors | Dudley, Michael (Stony Brook University, State University of New York) |
| Redaktors | Johnson, C. Mark (University of Nottingham) |
| Redaktors | Powell, Adrian R. |
| Redaktors | Ryu, Sei-Hyung |
