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Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition John E. Ayers 2. izdevums
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Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition
John E. Ayers
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
659 pages, 330 black & white illustrations, 22 colour illustrations, 49 black & white tables
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2016. gada 18. oktobris |
| ISBN13 | 9781482254358 |
| Izdevēji | Taylor & Francis Inc |
| Lapas | 643 |
| Izmēri | 260 × 184 × 42 mm · 1,39 kg |
| Valoda | Angļu |
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