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Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change Hai Li 1. izdevums
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Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change
Hai Li
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing technical barriers. So much so, that other technologies have been proposed as alternatives. This book introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory.
203 pages, 175 black & white illustrations, 10 black & white tables
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2011. gada 19. decembris |
| ISBN13 | 9781439807453 |
| Izdevēji | Taylor & Francis Inc |
| Lapas | 208 |
| Izmēri | 166 × 242 × 18 mm · 488 g |
| Valoda | Angļu |
