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Nanoscale Semiconductor Memories: Technology and Applications - Devices, Circuits, and Systems
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.
The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.
Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.
The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
448 pages, 83; 17 Tables, black and white; 316 Illustrations, black and white
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2017. gada 29. marts |
| ISBN13 | 9781138072640 |
| Izdevēji | Taylor & Francis Ltd |
| Lapas | 448 |
| Izmēri | 150 × 220 × 10 mm · 453 g |
| Valoda | Angļu |
| Redaktors | Iniewski, Krzysztof (Emerging Technologies CMOS Inc., British Columbia, Canada) |
| Redaktors | Kurinec, Santosh K. (Rochester Institute of Technology, New York, USA) |
