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Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications - IEEE Press Kimoto, Tsunenobu (Kyoto University, Japan)
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Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications - IEEE Press
Kimoto, Tsunenobu (Kyoto University, Japan)
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.
400 pages
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2014. gada 24. novembris |
| ISBN13 | 9781118313527 |
| Izdevēji | John Wiley & Sons Inc |
| Lapas | 400 |
| Izmēri | 251 × 179 × 32 mm · 1,25 kg |
| Valoda | Angļu |
