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MOS Interface Physics, Process and Characterization Shengkai Wang
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MOS Interface Physics, Process and Characterization
Shengkai Wang
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.
162 pages, 1 Tables, black and white; 97 Line drawings, black and white; 26 Halftones, black and whi
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2024. gada 29. janvāris |
| ISBN13 | 9781032106281 |
| Izdevēji | Taylor & Francis Ltd |
| Lapas | 162 |
| Izmēri | 150 × 220 × 10 mm · 453 g |
| Valoda | Angļu |
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