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Doping in III-V Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering Schubert, E. F. (AT&T Bell Laboratories, New Jersey)
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Doping in III-V Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering
Schubert, E. F. (AT&T Bell Laboratories, New Jersey)
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The various techniques and the key characteristics of dopants that are employed in III–V semiconductors are presented.
632 pages, 240 b/w illus. 1 table
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2005. gada 22. augusts |
| ISBN13 | 9780521017848 |
| Izdevēji | Cambridge University Press |
| Lapas | 632 |
| Izmēri | 229 × 151 × 40 mm · 936 g |
| Valoda | Angļu |
| Sērijas redaktors | Ahmad, Haroon |
| Sērijas redaktors | Broers, Alec |
| Sērijas redaktors | Pepper, Michael |
