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Ionizing Radiation Effects in MOS Devices and Circuits TP Ma
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Ionizing Radiation Effects in MOS Devices and Circuits
TP Ma
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process--induced radiation effects in the fabrication of high--density circuits.
608 pages, Ill.
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 1989. gada 4. aprīlis |
| ISBN13 | 9780471848936 |
| Izdevēji | John Wiley & Sons Inc |
| Lapas | 608 |
| Izmēri | 169 × 245 × 34 mm · 948 g |
| Redaktors | Dressendorfer, Paul V. (Sandia National Laboratories, Albuquerque, New Mexico) |
| Redaktors | Ma, T. P. (Yale University) |
