Pastāsti draugiem par šo preci:
Insulated Gate Bipolar Transistor IGBT Theory and Design Khanna, Vinod Kumar (Central Electronics Engineering Research Institute, Pilani, India)
Cena
€ 210,99
Pasūtīts no attālās noliktavas
Paredzamā piegāde . gada 22. okt. - . gada 5. nov.
Saņemiet paziņojumus par jauniem Khanna, Vinod Kumar (Central Electronics Engineering Research Institute, Pilani, India) izdevumiem
Mūsu klienti saka:
Pievienot savam iMusic vēlmju sarakstam
Insulated Gate Bipolar Transistor IGBT Theory and Design
Khanna, Vinod Kumar (Central Electronics Engineering Research Institute, Pilani, India)
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. * All-in-one resource* Explains the fundamentals of MOS and bipolar physics. * Covers IGBT operation, device and process design, power modules, and new IGBT structures. .
648 pages, index
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2003. gada 5. augusts |
| ISBN13 | 9780471238454 |
| Izdevēji | John Wiley & Sons Inc |
| Lapas | 648 |
| Izmēri | 165 × 244 × 44 mm · 1,03 kg |
| Valoda | Angļu |
