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Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design Enz, Christian C. (Swiss Centre for Electronics, Switzerland)
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Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design
Enz, Christian C. (Swiss Centre for Electronics, Switzerland)
As technology scales down to sub-micron dimensions the modelling of MOS device operation becomes of greater concern. The EKV model has been developed to facilitate the modelling and simulation of low voltage devices for application in low power semiconductor technologies.
328 pages, Illustrations
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2006. gada 14. jūlijs |
| ISBN13 | 9780470855416 |
| Izdevēji | John Wiley & Sons Inc |
| Lapas | 328 |
| Izmēri | 175 × 252 × 25 mm · 762 g |
| Valoda | Angļu |
