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Nanoscale Transistors: Device Physics, Modeling and Simulation Mark Lundstrom 2006 edition
Nanoscale Transistors: Device Physics, Modeling and Simulation
Mark Lundstrom
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.
218 pages, 106 black & white illustrations, biography
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2005. gada 9. decembris |
| ISBN13 | 9780387280028 |
| Izdevēji | Springer-Verlag New York Inc. |
| Lapas | 218 |
| Izmēri | 155 × 235 × 14 mm · 485 g |
| Valoda | Angļu |