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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.
130 pages, 7 Tables, black and white; 78 Line drawings, black and white; 1 Halftones, black and whit
| Mediji | Grāmatas Paperback Book (Grāmata ar mīksto vāku un līmēto muguru) |
| Izlaists | 2023. gada 25. septembris |
| ISBN13 | 9780367554156 |
| Izdevēji | Taylor & Francis Ltd |
| Lapas | 130 |
| Izmēri | 150 × 220 × 10 mm · 453 g |
| Valoda | Angļu |
| Redaktors | Mohankumar, N. (GITAM University, Bangalore) |
