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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications Mohankumar, N. (GITAM University, Bangalore) 1. izdevums
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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Mohankumar, N. (GITAM University, Bangalore)
This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.
160 pages, 78 Line drawings, black and white; 1 Halftones, black and white; 7 Tables, black and whit
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2021. gada 29. septembris |
| ISBN13 | 9780367554149 |
| Izdevēji | Taylor & Francis Ltd |
| Lapas | 130 |
| Izmēri | 379 × 213 × 15 mm · 362 g |
| Valoda | Angļu |
| Redaktors | Mohankumar, N. (GITAM University, Bangalore) |
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