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Stress and Strain Engineering at Nanoscale in Semiconductor Devices Maiti, Chinmay K. (SOA University Bhubaneswar, Odisha, India) 1. izdevums
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Stress and Strain Engineering at Nanoscale in Semiconductor Devices
Maiti, Chinmay K. (SOA University Bhubaneswar, Odisha, India)
Based on 3D process and device simulations with mechanical stress simulations by finite element techniques, this book explains performance assessment of nanoscale devices with strained SiGe and other stressors. It explains the process-induced stress transfer and developments at 7nm technology and below node in the area of strain-engineered devices.
304 pages, 136 Line drawings, black and white; 3 Halftones, black and white; 23 Tables, black and wh
| Mediji | Grāmatas Hardcover Book (Grāmata ar cieto muguriņu un vāku) |
| Izlaists | 2021. gada 30. jūnijs |
| ISBN13 | 9780367519292 |
| Izdevēji | Taylor & Francis Ltd |
| Lapas | 260 |
| Izmēri | 241 × 161 × 22 mm · 560 g |
| Valoda | Angļu |
