Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability - Synthesis Lectures on Solid State Materials and Devices - Young-Hee Kim - Grāmatas - Springer International Publishing AG - 9783031014246 - 2007. gada 31. decembris
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Young-Hee Kim
Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability - Synthesis Lectures on Solid State Materials and Devices

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Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm).

92 pages, X, 92 p.

Mediji Grāmatas     Paperback Book   (Grāmata ar mīksto vāku un līmēto muguru)
Izlaists 2007. gada 31. decembris
ISBN13 9783031014246
Izdevēji Springer International Publishing AG
Lapas 92
Izmēri 150 × 220 × 10 mm   ·   212 g
Valoda Angļu  

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